oxygen precipitation造句
例句與造句
- Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
鍺對重?fù)脚鹬崩柚醒醭恋淼挠绊?/li> - Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的測定-間隙氧含量減少法 - Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通過測量間隙氧含量的減少表征硅片氧沉淀特性的方法 - Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章還系統(tǒng)研究了快速熱處理( rtp )對重?fù)脚鸸鑶尉е醒醭恋淼挠绊憽? - Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
劉培東,朱愛平,張錦心等.碳和氮原子在氧沉淀中的作用[ j ] .半導(dǎo)體學(xué)報, 1999 , 20 : 107 - It's difficult to find oxygen precipitation in a sentence. 用oxygen precipitation造句挺難的
- The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重?fù)缴楣鑶尉г谥懈邷赝嘶饡r形成密度較高的氧沉淀及誘生缺陷。 - The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低溫750形核，重?fù)絘s硅單晶形核溫度較高，在750 - 900之間。 - Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
隨著退火時間的延長氧沉淀尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉淀尺寸相對減小。 - A modified ig process was suggested , through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained
使用改進的內(nèi)吸除工藝，在重?fù)缴楣杵砻嫘纬闪溯^寬的清潔區(qū)，體內(nèi)形成了較高密度的氧沉淀和誘生缺陷。 - Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature
對氧沉淀形態(tài)及誘生缺陷進行了tem測試分析，結(jié)果表明，在中溫退火時出現(xiàn)氧沉淀引起的層錯和位錯環(huán)；在高溫退火后生成了多面體形狀的氧沉淀。 - In this paper , firstly , the effect of heavy boron - doping on oxygen precipitation was investigated . after annealed at different conditions , it is found that oxygen precipitation is enhanced by heavily boron doping , especially at high temperature
本文研究了直拉重?fù)脚饐尉Ч璧难醭恋硇袨椋匮芯苛酥崩負(fù)脚鸸鑶尉е械难醭恋淼臒崽幚?、?nèi)吸雜、 rtp處理等性能。 - Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density . therefore , quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig
重?fù)缴楣枰r底片正日益受到器件廠家的青睞，所以研究重?fù)缴楣鑶尉е械难醭恋砑罢T生缺陷對實現(xiàn)重?fù)揭r底的內(nèi)吸除有重大意義。 - For the substrate of heavily boron doped wafer , it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth , which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重?fù)脚鸸鑶尉а鹾可?，氧沉淀被增強，能形成有效吸雜點，提高硅片機械強度，抑制void缺陷，有利于提高ulsi的成品率。 - The relationship of thermal stress , oxygen precipitates and dislocations were analyzed too . it can be seen that nitrogen enhanced the oxygen precipitation , which seemed to pin the dislocations generated by thermal stresses , so that no warpage were found in the heat treatment processing
熱處理過程中由于熱應(yīng)力及氧沉淀的作用，會使硅片產(chǎn)生位錯并導(dǎo)致翹曲，但是在本實驗中表現(xiàn)不明顯，可能是氧沉淀等對位錯的釘扎作用阻止了硅片的翹曲。 - Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well
結(jié)果顯示，對于普通輕摻硅片能形成明顯的很寬的潔凈區(qū)的rtp預(yù)處理工藝，應(yīng)用于重?fù)脚饦悠窌r沒有潔凈區(qū)形成，所以rtp預(yù)處理獲得潔凈區(qū)的工藝不適用于重?fù)脚鸸杵鸬拇罅繐诫s對氧沉淀促進效果大于高濃度的空位對氧沉淀的洲排浙江大學(xué)碩士學(xué)位論文李春龍：直拉重?fù)脚鸸鑶尉е醒醭恋淼难芯看龠M效果；大量空位的引入，有利于釋放氧沉淀生長過程的內(nèi)應(yīng)力，適當(dāng)增加重?fù)脚饦悠费醭恋砻芏?，減少其尺寸，并伴有層錯生成。
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